An intrinsic property of vertically aligned InN nanowire (NW) ensembles have been investigated by analysis of coupled longitudinal optical (LO) phonon mode using -Raman scattering. Spectra were recorded in backscattering geometries in parallel and perpendicular to the axis of the NWs. The width of surface accumulation layer is estimated from the LO phonon peak intensity ratios. The carrier concentration is extracted to be . The pronounced peak at is related to the interaction of phonons with surface electrons. The surface charge density, is calculated to be which provides surface accumulation field strength of 5.5 Mv/cm.
Raman scattering on intrinsic surface electron accumulation of InN nanowires
K. Jeganathan, V. Purushothaman, R. K. Debnath, R. Calarco, H. Luth; Raman scattering on intrinsic surface electron accumulation of InN nanowires. Appl. Phys. Lett. 30 August 2010; 97 (9): 093104. https://doi.org/10.1063/1.3483758
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