Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, , is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.
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See supplementary material at http://dx.doi.org/10.1063/1.3480599 for a full description of the materials, device preparation, experimental methods, impedance measurements, and optical corrections used to determine internal quantum yields.
© 2010 American Institute of Physics.
2010
American Institute of Physics
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