In situ ultraviolet photoemission spectroscopy was used during the pentacene layer growth on ruthenium and ruthenium oxide films to measure the energy barrier in the metal-semiconductor contact. The measurement showed that ruthenium oxide film formed lower hole-injection barrier with pentacene than ruthenium or gold metal film due to its high work function of 4.92 eV and low resistivity of 350μΩcm. Pentacene thin film transistor with ruthenium oxide electrode showed higher mobility of 0.435cm2/Vs and on-off ratio of 106 than ruthenium (μ: 0.205cm2/Vs, on/off ratio: 106) or gold electrode (μ: 0.338cm2/Vs, on/off ratio: 106) of the same structure.

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