In situ ultraviolet photoemission spectroscopy was used during the pentacene layer growth on ruthenium and ruthenium oxide films to measure the energy barrier in the metal-semiconductor contact. The measurement showed that ruthenium oxide film formed lower hole-injection barrier with pentacene than ruthenium or gold metal film due to its high work function of 4.92 eV and low resistivity of . Pentacene thin film transistor with ruthenium oxide electrode showed higher mobility of and on-off ratio of than ruthenium (: , on/off ratio: ) or gold electrode (: , on/off ratio: ) of the same structure.
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