Polarization-doping via graded AlGaN layer on N-face GaN has been demonstrated as an inspiring p-type doping method for wide-band-gap nitrides. However, the polarity of III-nitrides grown by metal organic chemical vapor deposition is metal-face typically. In this paper, we show that three-dimensional mobile hole gas induced by polarization can be formed in (0001)-oriented metal-face III-nitride structure. The hole concentration of a Mg-doped layer with graded Al composition from to 0 grown on AlN buffer layer is remarkably enhanced, compared with that of a Mg-doped GaN layer grown under the same conditions. In addition, the hole concentration in the graded AlGaN layer is absence of freezeout as the temperature decreases, indicating that the hole is induced by polarization. This p-type doping method paves a way for achieving high-efficiency in wide-band-gap semiconductor light-emitting devices with p-type doping problem.
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9 August 2010
Research Article|
August 09 2010
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure
L. Zhang;
L. Zhang
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
Search for other works by this author on:
K. Ding;
K. Ding
a)
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
Search for other works by this author on:
J. C. Yan;
J. C. Yan
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
Search for other works by this author on:
J. X. Wang;
J. X. Wang
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
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Y. P. Zeng;
Y. P. Zeng
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
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T. B. Wei;
T. B. Wei
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
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Y. Y. Li;
Y. Y. Li
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
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B. J. Sun;
B. J. Sun
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
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R. F. Duan;
R. F. Duan
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
Search for other works by this author on:
J. M. Li
J. M. Li
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
Search for other works by this author on:
L. Zhang
K. Ding
a)
J. C. Yan
J. X. Wang
Y. P. Zeng
T. B. Wei
Y. Y. Li
B. J. Sun
R. F. Duan
J. M. Li
Research and Development Center for Semiconductor Lighting,
Chinese Academy of Sciences
, P.O. Box 912, Beijing 100083, People’s Republic of China
a)
Electronic mail: [email protected].
Appl. Phys. Lett. 97, 062103 (2010)
Article history
Received:
May 03 2010
Accepted:
July 22 2010
Citation
L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, J. M. Li; Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure. Appl. Phys. Lett. 9 August 2010; 97 (6): 062103. https://doi.org/10.1063/1.3478556
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