Structural and electrical analysis of the atomic layer deposition of $HfO2/n-In0.53Ga0.47As$ capacitors with and without an $Al2O3$ interface control layer Available to Purchase

High mobility III-V substrates with high-$k$ oxides are required for device scaling without loss of channel mobility. Interest has focused on the self-cleaning effect on selected III-V substrates during atomic layer deposition of $Al2O3$⁠. A thin $(∼1nm)$ $Al2O3$ interface control layer is deposited on $In0.53Ga0.47As$ prior to $HfO2$ growth, providing the benefit of self-cleaning and improving the interface quality by reducing interface state defect densities by $∼50%$ while maintaining scaling trends. Significant reductions in leakage current density and increased breakdown voltage are found, indicative of a band structure improvement due to the reduction/removal of the $In0.53Ga0.47As$ native oxides.