We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.626.7μJ/cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.

1.
U.
Keller
,
Nature (London)
424
,
831
(
2003
).
2.
L. R.
Brovelli
,
U.
Keller
, and
T. H.
Chiu
,
J. Opt. Soc. Am. B
12
,
311
(
1995
).
3.
A.
Jasik
,
J.
Muszalski
,
K.
Pierscinski
,
M.
Bugajski
,
V. G.
Talalaev
, and
M.
Kosmala
,
J. Appl. Phys.
106
,
053101
(
2009
).
4.
D. B.
Malins
,
A.
Gomez-Iglesias
,
S. J.
White
,
W.
Sibbett
,
A.
Miller
, and
E. U.
Rafailov
,
Appl. Phys. Lett.
89
,
171111
(
2006
).
5.
D.
Turchinovich
,
P. U.
Jepsen
,
B. S.
Monozon
,
M.
Koch
,
S.
Lahmann
,
U.
Rossow
, and
A.
Hangleiter
,
Phys. Rev. B
68
,
241307
(R) (
2003
).
6.
D.
Turchinovich
,
B. S.
Monozon
, and
P. U.
Jepsen
,
J. Appl. Phys.
99
,
013510
(
2006
).
7.
B.
Stormont
,
E. U.
Rafailov
,
I. G.
Cormack
,
A.
Mooradian
, and
W.
Sibbett
,
Electron. Lett.
40
,
732
(
2004
).
8.
A.
Isomäki
,
A.
Vainionpää
,
S.
Suomalainen
, and
O. G.
Okhotnikov
,
Proc. SPIE
5958
,
59580R
(
2005
).
9.
A. A.
Lagatsky
,
E. U.
Rafailov
,
W.
Sibbett
,
D. A.
Livshits
,
A. E.
Zhukov
, and
V. M.
Ustinov
,
IEEE Photonics Technol. Lett.
17
,
294
(
2005
).
10.
S. A.
Zolotovskaya
,
K. G.
Wilcox
,
A.
Abdolvand
,
D. A.
Livshits
, and
E. U.
Rafailov
,
IEEE Photonics Technol. Lett.
21
,
1124
(
2009
).
11.
D.
Turchinovich
,
X.
Liu
, and
J.
Lægsgaard
,
Opt. Express
16
,
14004
(
2008
).
12.
M. A.
Ordal
,
L. L.
Long
,
R. J.
Bell
,
S. E.
Bell
,
R. R.
Bell
,
R. W.
Alexander
, Jr.
, and
C. A.
Ward
,
Appl. Opt.
22
,
1099
(
1983
).
13.
In order to prevent the electric breakdown of the p-i-n structure, we limited the reverse bias to 2 V in all measurements, and the forward bias to 0.5 V in R(V,λ) measurements.
14.
J. -C.
Wang
,
C. -K.
Sun
, and
J. -K.
Wang
,
Appl. Phys. Lett.
89
,
231106
(
2006
).
15.
D. A. B.
Miller
,
D. S.
Chemla
,
T. C.
Damen
,
A. C.
Gossard
,
W.
Wiegmann
,
T. H.
Wood
, and
C. A.
Burrus
,
Phys. Rev. Lett.
53
,
2173
(
1984
).
16.
X.
Liu
,
J.
Lægsgaard
, and
D.
Turchinovich
,
Opt. Lett.
35
,
913
(
2010
).
17.
X.
Liu
,
J.
Lægsgaard
, and
D.
Turchinovich
,
Opt. Express
18
,
15475
(
2010
).
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