Optimizing transistor performance of percolating carbon nanotube networks Available to Purchase

In percolating networks of mixed metallic and semiconducting carbon nanotubes (CNTs), there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks). Experiments on transistors and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length $(L)$ for CNT density $(p)$ between 0.04 and $1.29CNTs/μm2$ in the on- and off-states (nanotube root mean square length of $5μm$⁠). Optimized devices with field-effect mobility up to $50cm2/Vs$ at on/off ratio $>103$ were obtained at channel width $W=50μm$ and $L>70μm$ for $p=0.54–0.81CNTs/μm2$⁠.