The magnetoelectric response of (PZT/LSMO) artificial multiferroic heterostructures as a function of temperature, electric, and magnetic field, shows that the largest magnetoelectric coupling is attained at temperatures near the magnetic critical point of LSMO, at . The magnetoelectric coupling displays a strong temperature dependence, changing sign at 150 K and saturating to positive values below . The magnetoelectric curve switches hysteretically between two states in response to the ferroelectric switching. The peak in the magnetoelectric response coincides with the observation of on/off switching of magnetism in LSMO near the critical region, where the sensitivity to electric field is largest, making it a promising approach for device applications.
Skip Nav Destination
,
,
,
,
,
Article navigation
26 July 2010
Research Article|
July 29 2010
Temperature dependence of the magnetoelectric effect in multiferroic heterostructures
C. A. F. Vaz;
C. A. F. Vaz
a)
Department of Applied Physics and CRISP,
Yale University
, New Haven, Connecticut 06520, USA
Search for other works by this author on:
Y. Segal;
Y. Segal
Department of Applied Physics and CRISP,
Yale University
, New Haven, Connecticut 06520, USA
Search for other works by this author on:
J. Hoffman;
J. Hoffman
Department of Applied Physics and CRISP,
Yale University
, New Haven, Connecticut 06520, USA
Search for other works by this author on:
R. D. Grober;
R. D. Grober
Department of Applied Physics and CRISP,
Yale University
, New Haven, Connecticut 06520, USA
Search for other works by this author on:
F. J. Walker;
F. J. Walker
Department of Applied Physics and CRISP,
Yale University
, New Haven, Connecticut 06520, USA
Search for other works by this author on:
C. H. Ahn
C. H. Ahn
Department of Applied Physics and CRISP,
Yale University
, New Haven, Connecticut 06520, USA
Search for other works by this author on:
C. A. F. Vaz
a)
Y. Segal
J. Hoffman
R. D. Grober
F. J. Walker
C. H. Ahn
Department of Applied Physics and CRISP,
Yale University
, New Haven, Connecticut 06520, USA
a)
Electronic mail: [email protected].
Appl. Phys. Lett. 97, 042506 (2010)
Article history
Received:
June 01 2010
Accepted:
July 06 2010
Citation
C. A. F. Vaz, Y. Segal, J. Hoffman, R. D. Grober, F. J. Walker, C. H. Ahn; Temperature dependence of the magnetoelectric effect in multiferroic heterostructures. Appl. Phys. Lett. 26 July 2010; 97 (4): 042506. https://doi.org/10.1063/1.3472259
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Related Content
Control of magnetism in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures (invited)
J. Appl. Phys. (March 2011)
Growth and characterization of PZT/LSMO multiferroic heterostructures
J. Vac. Sci. Technol. B (July 2010)
Combining half-metals and multiferroics into epitaxial heterostructures for spintronics
Appl. Phys. Lett. (February 2006)
Size effect on magnetoelectric coupling in multiferroic heterostructures
J. Appl. Phys. (April 2011)