This paper reports on a two-terminal silicon nanoribbon (SiNR) field-effect sensor operated in electrolyte. Observed experimentally and confirmed by modeling, the sensor is activated by self-gating with a gate bias set by the potential difference of the two terminals. The effect of this gate bias on the SiNR conductance is modulated by the potential drop over the electrical double layer (EDL) established on the SiNR surface, similarly to the threshold voltage modulation by EDL in a three-terminal SiNR field-effect transistor with an independent gate electrode. The potential drop over EDL is determined by the value of the electrolyte.
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Research Article| December 29 2010
A two-terminal silicon nanoribbon field-effect sensor
Amelie Eriksson Karlström;
Si Chen, Nima Jokilaakso, Per Björk, Amelie Eriksson Karlström, Shi-Li Zhang; A two-terminal silicon nanoribbon field-effect sensor. Appl. Phys. Lett. 27 December 2010; 97 (26): 264102. https://doi.org/10.1063/1.3532964
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