Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. An opposite sequence of switching with different charge carriers, holes, and electrons is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the on/off ratio of graphene resistive switching are suggested.
REFERENCES
1.
Y. B.
Zhang
, Y. W.
Tan
, H. L.
Stormer
, and P.
Kim
, Nature (London)
438
, 201
(2005
).2.
A. K.
Geim
and K. S.
Novoselov
, Nature Mater.
6
, 183
(2007
).3.
A. K.
Geim
, Science
324
, 1530
(2009
).4.
D. C.
Elias
, R. R.
Nair
, T. M. G.
Mohiuddin
, S. V.
Morozov
, P.
Blake
, M. P.
Halsall
, A. C.
Ferrari
, D. W.
Boukhvalov
, M. I.
Katsnelson
, A. K.
Geim
, and K. S.
Novoselov
, Science
323
, 610
(2009
).5.
B.
Standley
, W. Z.
Bao
, H.
Zhang
, J.
Bruck
, C. N.
Lau
, and M.
Bockrath
, Nano Lett.
8
, 3345
(2008
).6.
Y. M.
Lin
, C.
Dimitrakopoulos
, K. A.
Jenkins
, D. B.
Farmer
, H. Y.
Chiu
, A.
Grill
, and P.
Avouris
, Science
327
, 662
(2010
).7.
Y. B.
Li
, A.
Sinitskii
, and J. M.
Tour
, Nature Mater.
7
, 966
(2008
).8.
J.
Yao
, Z.
Jin
, L.
Zhong
, D.
Natelson
, and J. M.
Tour
, ACS Nano
3
, 4122
(2009
).9.
C. L.
He
, F.
Zhuge
, X. F.
Zhou
, M.
Li
, G. C.
Zhou
, Y. W.
Liu
, J. Z.
Wang
, B.
Chen
, W. J.
Su
, Z. P.
Liu
, Y. H.
Wu
, P.
Cui
, and R. W.
Li
, Appl. Phys. Lett.
95
, 232101
(2009
).10.
S.
Datta
, Quantum Transport: Atom to Transistor
(Cambridge University Press
, Cambridge, MA
, 2005
).11.
Y. J.
Shin
, Y.
Wang
, H.
Huang
, G.
Kalon
, A. T. S.
Wee
, Z.
Shen
, C. S.
Bhatia
, and H.
Yang
, Langmuir
26
, 3798
(2010
).12.
A. C.
Ferrari
, J. C.
Meyer
, V.
Scardaci
, C.
Casiraghi
, M.
Lazzeri
, F.
Mauri
, S.
Piscanec
, D.
Jiang
, K. S.
Novoselov
, S.
Roth
, and A. K.
Geim
, Phys. Rev. Lett.
97
, 187401
(2006
).13.
K. S.
Novoselov
, A. K.
Geim
, S. V.
Morozov
, D.
Jiang
, Y.
Zhang
, S. V.
Dubonos
, I. V.
Grigorieva
, and A. A.
Firsov
, Science
306
, 666
(2004
).14.
J.
Moser
, A.
Barreiro
, and A.
Bachtold
, Appl. Phys. Lett.
91
, 163513
(2007
).15.
Y. B.
Zhou
, B. H.
Han
, Z. M.
Liao
, Q.
Zhao
, J.
Xu
, and D. P.
Yu
, J. Chem. Phys.
132
, 024706
(2010
).16.
M. P.
Levendorf
, C. S.
Ruiz-Vargas
, S.
Garg
, and J.
Park
, Nano Lett.
9
, 4479
(2009
).17.
J. J.
Yang
, M. D.
Pickett
, X. M.
Li
, D. A. A.
Ohlberg
, D. R.
Stewart
, and R. S.
Williams
, Nat. Nanotechnol.
3
, 429
(2008
).18.
S.
Datta
, Nanotechnology
15
, S433
(2004
).19.
I.
Meric
, M. Y.
Han
, A. F.
Young
, B.
Ozyilmaz
, P.
Kim
, and K. L.
Shepard
, Nat. Nanotechnol.
3
, 654
(2008
).20.
M. Y.
Han
, B.
Ozyilmaz
, Y. B.
Zhang
, and P.
Kim
, Phys. Rev. Lett.
98
, 206805
(2007
).21.
Y. B.
Zhang
, T. T.
Tang
, C.
Girit
, Z.
Hao
, M. C.
Martin
, A.
Zettl
, M. F.
Crommie
, Y. R.
Shen
, and F.
Wang
, Nature (London)
459
, 820
(2009
).© 2010 American Institute of Physics.
2010
American Institute of Physics
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