Well-ordered chains of InP quantum dots on a self-organized undulating In0.48Ga0.52P surface exhibit optical anisotropy due to their shape and the In0.48Ga0.52P matrix. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the In0.48Ga0.52P matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots, [1¯10]. A polarization degree of 66% is observed; this polarization in emission is independent of the polarization of the excitation laser. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.

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