Heterojunctions made of hydrogenated amorphous silicon and crystalline silicon are examined by conducting probe atomic force microscopy. Conductive channels at both and interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the surface in agreement with previous planar conductance measurements. The presence of a hole gas in structures implies a quite large valence band offset .
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.© 2010 American Institute of Physics.
2010
American Institute of Physics
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