We report the experimental demonstration of quantum point contact (QPC) field-effect transistor (FET) with a voltage gain greater than 1 at 4.2 K. Using Landauer–Büttiker approach in mesoscopic physics, simulation results show that this transistor is a fully ballistic one-dimensional FET, and the mechanism leading to a high gain is explained. This work provides therefore a general basis for devising future ballistic FETs.
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