In situNH3 plasma surface-nitridation treatments at 250°C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOxNy interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2(3nm)/GeOxNy(1nm) gate stacks. Gate leakage current density was below 5×107A/cm2 at VFB±1V for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with GeOxNy interlayer formed by in situNH3 plasma treatment.

1.
C. O.
Chui
,
H.
Kim
,
D.
Chi
,
B. B.
Triplett
,
P. C.
McIntyre
, and
K. C.
Saraswat
,
Tech. Dig. - Int. Electron Devices Meet.
2002
,
437
.
2.
C. O.
Chui
,
S.
Ramanathan
,
B. B.
Triplet
,
P. C.
McIntyre
, and
K. C.
Saraswat
,
IEEE Electron Device Lett.
23
,
473
(
2002
).
3.
Y.
Oshima
,
M.
Shandalov
,
Y.
Sun
,
P.
Pianetta
, and
P. C.
McIntyre
,
Appl. Phys. Lett.
94
,
183102
(
2009
).
4.
A.
Dimoulas
,
G.
Mavrou
,
G.
Vellianitis
,
E.
Evangelou
,
N.
Boukos
,
M.
Houssa
, and
M.
Caymax
,
Appl. Phys. Lett.
86
,
032908
(
2005
).
5.
T.
Maeda
,
M.
Nishizawa
,
Y.
Morita
, and
S.
Takagi
,
Appl. Phys. Lett.
90
,
072911
(
2007
).
6.
J. J. H.
Chen
,
N. A.
Bojarezuk
,
H.
Shang
,
M.
Copel
,
J. B.
Hannon
,
J.
Karasinski
,
E.
Preisler
,
S. K.
Banerjee
, and
S.
Guha
,
IEEE Trans. Electron Devices
51
,
1441
(
2004
).
7.
R.
Xie
,
T. H.
Phung
,
M.
Yu
, and
C.
Zhu
,
IEEE Trans. Electron Devices
57
,
1399
(
2010
).
8.
H.
Kim
,
P. C.
McIntyre
,
C. O.
Chui
,
K. C.
Saraswat
, and
M. H.
Cho
,
Appl. Phys. Lett.
85
,
2902
(
2004
).
9.
N.
Wu
,
Q.
Zhang
,
C.
Zhu
,
C. C.
Yeo
,
S. J.
Whang
,
D. S. H.
Chan
,
M. F.
Li
,
B. J.
Cho
,
A.
Chin
,
D. L.
Kwong
,
A. Y.
Du
,
C. H.
Tung
, and
N.
Balasubramanian
,
Appl. Phys. Lett.
84
,
3741
(
2004
).
10.
S.
Van Elshocht
,
B.
Brijs
,
M.
Caymax
,
T.
Conard
,
T.
Chiarella
,
S. D.
Gendt
,
B. D.
Jaeger
,
S.
Kubicek
,
M.
Meuris
,
B.
Onsia
,
O.
Richard
,
I.
Teerlinck
,
J. V.
Steenbergen
,
C.
Zhao
, and
M.
Heyns
,
Appl. Phys. Lett.
85
,
3824
(
2004
).
11.
E. P.
Gusev
,
H.
Shang
,
M.
Copel
,
M.
Gribelyuk
,
C.
D’Emic
,
P.
Kozlowski
, and
T.
Zabel
,
Appl. Phys. Lett.
85
,
2334
(
2004
).
12.
W.
Bai
and
D. L.
Kwong
,
IEEE Electron Device Lett.
28
,
369
(
2007
).
13.
N.
Lu
,
W.
Bai
,
A.
Ramirez
,
C.
Mouli
,
A.
Ritenour
,
M. L.
Lee
,
D.
Antoniadis
, and
D. L.
Kwong
,
Appl. Phys. Lett.
87
,
051922
(
2005
).
14.
C. C.
Cheng
,
C. H.
Chien
,
G. L.
Luo
,
C. H.
Yang
,
M. L.
Kuo
,
J. H.
Lin
,
C. K.
Tseng
, and
C. Y.
Chang
,
J. Electrochem. Soc.
154
,
G155
(
2007
).
15.
A.
Delabie
,
F.
Bellenger
,
M.
Houssa
,
T.
Conard
,
S. V.
Elshocht
,
M.
Caymax
,
M.
Heyns
, and
M.
Meuris
,
Appl. Phys. Lett.
91
,
082904
(
2007
).
16.
Q.
Xie
,
Y. L.
Jiang
,
C.
Detavernier
,
D.
Deduytsche
,
R. L.
Van Meirhaeghe
,
G. P.
Ru
,
B. Z.
Li
, and
X. P.
Qu
,
J. Appl. Phys.
102
,
083521
(
2007
).
17.
Q.
Xie
,
J.
Musschoot
,
D.
Deduytsche
,
R. L.
Van Meirhaeghe
,
C.
Detavernier
,
S. Van Den.
Berghe
,
Y. L.
Jiang
,
G. P.
Ru
,
B. Z.
Li
, and
X. P.
Qu
,
J. Electrochem. Soc.
155
,
H688
(
2008
).
18.
J.
McPherson
,
J. Y.
Kim
,
A.
Shanware
, and
H.
Mogul
,
Appl. Phys. Lett.
82
,
2121
(
2003
).
19.
K. B.
Jinesh
,
Y.
Lamy
,
J. H.
Klootwijk
, and
W. F. A.
Besling
,
Appl. Phys. Lett.
95
,
122903
(
2009
).
20.
D. K.
Schroder
,
Semiconductor Material and Device Characterization
(
Wiley
,
New York
,
1998
), pp.
337
419
.
21.
C. N.
Berglund
,
IEEE Trans. Electron Devices
13
,
701
(
1966
).
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