In situ plasma surface-nitridation treatments at on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality interlayer was formed and exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics were obtained for the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with gate stacks. Gate leakage current density was below at for both MOSCAPs with an equivalent oxide thickness of 1.1 nm. Promising electrical properties of the CMOSCAPs indicate effective passivation of the Ge interface with interlayer formed by in situ plasma treatment.
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