We report the first demonstration of a GaAs based avalanche photodiode (APD) operating in the midwave infrared region (35μm). In the device, called the quantum dot avalanche photodiode, an intersubband quantum dots-in-a-well detector is coupled with an APD through a tunnel barrier. Using this approach, we have increased the photocurrent and reached a conversion efficiency of 12%, which is one of the highest reported conversion efficiencies for any quantum dot detector.

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