Metal gate work function enhancement using nanoscale (1.0 nm) interfacial layers has been evaluated as a function of silicon oxide content in the gate dielectric and process thermal budget. It is found that the effective work function tuning by the capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% , and by nearly 300 mV as the maximum process temperature increased from ambient to . A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.
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Research Article| November 19 2010
Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics
H. N. Alshareef;
J. A. Caraveo-Frescas;
H. N. Alshareef, J. A. Caraveo-Frescas, D. K. Cha; Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics. Appl. Phys. Lett. 15 November 2010; 97 (20): 202108. https://doi.org/10.1063/1.3519363
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