We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the Si/SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

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