On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC Available to Purchase

Heterojunctions of $p+$ B-doped nanocrystalline diamond (NCD) to $n−$ 4H-SiC were studied by electrical and cathodoluminescence (CL) methods. Current rectification at $30°C$ had a curvature coefficient $γ0$ of $42.1V−1$ at zero bias, $γmax$ of $105.35V−1$ at 0.2 V, and a reverse current of $<10nA/cm2$⁠. The NCD sheet resistance decreased from $4.1×1011$ to $403.56Ω/sq.$ as the carrier density $Ns$ was increased from $3.5×105$ to $1.5×1016cm−2$ by $B2H6$ doping. The $348cm2/V-s$ mobility of the B-free NCD films was comparable to that of single crystal diamond. CL data revealed traps 0.6–0.8 eV from the NCD $EV$ edge.