In this letter, we have studied the density of microtwins in the vicinity of the film surface, by using in-plane grazing incidence diffraction technique, to suggest a reduction trend of such defects at different growth rates. In (100) 3C–SiC heteroepitaxy, microtwin density decreases when a slower growth rate process is performed. A reduction ratio of microtwins of 0.16, 0.2, and 0.28 for , , and , respectively, has been obtained. The relationship between microtwin density and growth rate, or ratio, found with this technique is in perfect agreement with the pre-existent literature.
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Research Article| November 03 2010
Microtwin reduction in 3C–SiC heteroepitaxy
A. Severino, F. La Via; Microtwin reduction in 3C–SiC heteroepitaxy. Appl. Phys. Lett. 1 November 2010; 97 (18): 181916. https://doi.org/10.1063/1.3514559
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