In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx-passivated Hf–In–Zn–O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.

1.
E.
Fortunato
,
P.
Barquinha
,
A.
Pimentel
,
A.
Goncalves
,
A.
Marques
,
L.
Pereira
, and
R.
Martins
,
Adv. Mater. (Weinheim, Ger.)
17
,
590
(
2005
).
2.
H.
Yabuta
,
M.
Sano
,
K.
Abe
,
T.
Aiba
,
T.
Den
,
H.
Kumomi
,
K.
Nomura
,
T.
Kamiya
, and
H.
Hosono
,
Appl. Phys. Lett.
89
,
112123
(
2006
).
3.
A.
Sato
,
K.
Abe
,
R.
Hayashi
,
H.
Kumomi
,
K.
Nomura
,
T.
Kamiya
,
M.
Hirano
, and
H.
Hosono
,
Appl. Phys. Lett.
94
,
133502
(
2009
).
4.
C. -J.
Kim
,
S.
Kim
,
J. -H.
Lee
,
J. -S.
Park
,
S.
Kim
,
J.
Park
,
E.
Lee
,
J.
Lee
,
Y.
Park
,
J. H.
Kim
,
S. T.
Shim
, and
U. -I.
Chung
,
Appl. Phys. Lett.
95
,
252103
(
2009
).
5.
J. S.
Park
,
T. S.
Kim
,
K. S.
Son
,
K. -H.
Lee
,
W. -J.
Maeng
,
H. -S.
Kim
,
E. S.
Kim
,
K. -B.
Park
,
J. -B.
Seon
,
W.
Choi
,
M. K.
Ryu
, and
S. Y.
Lee
,
Appl. Phys. Lett.
96
,
262109
(
2010
).
6.
P. B.
Abel
,
A. L.
Korenyi-Both
,
F. S.
Honecy
, and
S. V.
Pepper
,
J. Mater. Res.
9
,
617
(
1994
).
7.
S. W.
Russell
,
S. A.
Rafalski
,
R. L.
Spreitzer
,
J.
Li
,
M.
Moinpour
,
F.
Moghadam
, and
T. L.
Alford
,
Thin Solid Films
262
,
154
(
1995
).
8.
S. E.
Laux
,
IEEE Trans. Electron Devices
31
,
1245
(
1984
).
9.
S.
Luan
and
G. W.
Neudeck
,
J. Appl. Phys.
72
,
766
(
1992
).
10.
I.
Barin
,
F.
Sauert
,
E. S.
Rhonhof
, and
W. S.
Sheng
,
Thermochemical Data of Pure Substances
(
Wiley
,
New York
,
1989
).
11.
S. A.
Campbell
,
H. -S.
Kim
,
D. C.
Gilmer
,
B.
He
,
T.
Ma
, and
W. L.
Gladfelter
,
IBM J. Res. Dev.
43
,
383
(
1999
).
12.
R. L.
Hoffman
,
B. J.
Norris
, and
J. F.
Wager
,
Appl. Phys. Lett.
82
,
733
(
2003
).
13.
J. -W.
Park
and
S.
Yoo
,
IEEE Electron Device Lett.
29
,
724
(
2008
).
14.
J. -W.
Park
,
S. -W.
Han
,
N.
Jeon
,
J.
Jang
, and
S.
Yoo
,
IEEE Electron Device Lett.
29
,
1319
(
2008
).
You do not currently have access to this content.