The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal. The analysis using the cross-bridge Kelvin (CBK) structure suggested that a transition from the edge conduction to area conduction occurred for a contact length shorter than the transfer length of . The contact resistivity for Ni was measured as using the CBK. A simple calculation suggests that a contact resistivity less than is required for miniaturized graphene field effect transistors.
REFERENCES
1.
P.
Blake
, R.
Yang
, S. V.
Morozov
, F.
Schedin
, L. A.
Ponomarenko
, A. A.
Zhukov
, R. R.
Nair
, I. V.
Grigorieva
, K. S.
Novoselov
, and A. K.
Geim
, Solid State Commun.
149
, 1068
(2009
).2.
R.
Murali
, Y.
Yang
, K.
Brenner
, T.
Beck
, and J. D.
Meindl
, Appl. Phys. Lett.
94
, 243114
(2009
).3.
A.
Venugopal
, L.
Colombo
, and E. M.
Vogel
, Appl. Phys. Lett.
96
, 013512
(2010
).4.
S.
Russo
, M. F.
Cracium
, M.
Yamamoto
, A. F.
Morpurgo
, and S.
Tarucha
, Physica E (Amsterdam)
42
, 677
(2010
).5.
K.
Nagashio
, T.
Nishimura
, K.
Kita
, and A.
Toriumi
, Tech. Dig. - Int. Electron Devices Meet.
2009
, 565
.6.
K.
Nagashio
, T.
Nishimura
, K.
Kita
, and A.
Toriumi
, Jpn. J. Appl. Phys.
49
, 051304
(2010
).7.
J.
Bai
, X.
Zhong
, S.
Jiang
, Y.
Huang
, and X.
Duan
, Nat. Nanotechnol.
5
, 190
(2010
).8.
F.
Xia
, D. B.
Farmer
, Y. -M.
Lin
, and P.
Avouris
, Nano Lett.
10
, 715
(2010
).9.
K.
Nagashio
, T.
Nishimura
, K.
Kita
, and A.
Toriumi
, Appl. Phys. Express
2
, 025003
(2009
).10.
H.
Murrmann
and D.
Widmann
, IEEE Trans. Electron Devices
ED-16
, 1022
(1969
).11.
D. K.
Schroder
, Semiconductor Material and Device Characterization
(John Wiley & Sons
, Hoboken, NJ
, 2006
), p. 138
.12.
S. J.
Proctor
, L. W.
Linholm
, and J. A.
Mazer
, IEEE Trans. Electron Devices
30
, 1535
(1983
).13.
G.
Giovannetti
, P. A.
Khomyakov
, G.
Brocks
, V. M.
Karpan
, J.
van den Brink
, and P. J.
Kelly
, Phys. Rev. Lett.
101
, 026803
(2008
).14.
Y. -J.
Yu
, Y.
Zhao
, S.
Ryu
, L. E.
Brus
, K. S.
Kim
, and P.
Kim
, Nano Lett.
9
, 3430
(2009
).15.
S. M.
Sze
and K. K.
Ng
, Physics of Semiconductor Devices
(John Wiley & Sons
, Hoboken, NJ
, 2007
), p. 137
.© 2010 American Institute of Physics.
2010
American Institute of Physics
You do not currently have access to this content.