This paper reports an extensive analysis of the degradation of deep-ultraviolet light-emitting diodes submitted to dc stress test. The study was carried out by means of combined electrical and optical characterization techniques. Results described in the paper indicate that the following: (i) stress can induce a significant decrease in the optical power emitted by the devices; (ii) optical power decrease is more prominent at low measuring current levels, thus suggesting that degradation is related to an increase in the concentration of defects; (iii) stress induces a significant increase in the green-yellow parasitic emission of the devices; and (iv) stress causes a localized increase in the apparent charge distribution profiles in the active region of the devices. Experimental evidence collected within this work suggest that degradation is due to an increase in the defectiveness in the active layer of the devices, with subsequent worsening of their radiative efficiency.

1.
M.
Shur
and
R.
Gaska
,
IEEE Trans. Electron Devices
57
,
12
(
2010
).
2.
A. A.
Allerman
,
M. H.
Crawford
,
A. J.
Fischer
,
K. H. A.
Bogart
,
S. R.
Lee
,
D. M.
Follstaedt
,
P. P.
Provencio
, and
D. D.
Koleske
,
J. Cryst. Growth
272
,
227
(
2004
).
3.
Z.
Gong
,
M.
Gaevski
,
V.
Adivarahan
,
W.
Sun
,
M.
Shatalov
, and
M. A.
Khan
,
Appl. Phys. Lett.
88
,
121106
(
2006
).
4.
M.
Meneghini
,
M.
Pavesi
,
N.
Trivellin
,
R.
Gaska
,
E.
Zanoni
, and
G.
Meneghesso
,
IEEE Trans. Device Mater. Reliab.
8
,
248
(
2008
).
5.
S.
Sawyer
,
S. L.
Rumyantsev
, and
M. S.
Shur
,
Solid-State Electron.
52
,
968
(
2008
).
6.
C. G.
Moe
,
M. L.
Reed
,
G. A.
Garrett
,
A. V.
Sampath
,
T.
Alexander
,
H.
Shen
,
M.
Wraback
,
Y.
Bilenko
,
M.
Shatalov
,
J.
Yang
,
W.
Sun
,
J.
Deng
, and
R.
Gaska
,
Appl. Phys. Lett.
96
,
213512
(
2010
).
7.
Y.
Xi
and
E. F.
Schubert
,
Appl. Phys. Lett.
85
,
2163
(
2004
).
8.
V.
Adivarahan
,
W. H.
Sun
,
A.
Chitnis
,
M.
Shatalov
,
S.
Wu
,
H. P.
Maruska
, and
M.
Asif Khan
,
Appl. Phys. Lett.
85
,
2175
(
2004
).
9.
N.
Otsuka
,
A.
Tsujimura
,
Y.
Hasegawa
,
G.
Sugahara
,
M.
Kume
, and
Y.
Ban
,
Jpn. J. Appl. Phys., Part 2
39
,
L445
(
2000
).
10.
J. S.
Park
,
D. W.
Fothergill
,
P.
Wellenius
,
S. M.
Bishop
,
J. F.
Muth
, and
R. F.
Davis
,
Jpn. J. Appl. Phys., Part 1
45
,
4083
(
2006
).
11.
K. X.
Chen
,
Y. A.
Xi
,
F. W.
Mont
,
J. K.
Kim
,
E. F.
Schubert
,
W.
Liu
,
X.
Li
, and
J. A.
Smart
,
J. Appl. Phys.
101
,
113102
(
2007
).
12.
K. X.
Chen
,
Q.
Dai
,
W.
Lee
,
J. K.
Kim
,
E. F.
Schubert
,
W.
Liu
,
S.
Wu
,
X.
Li
, and
J. A.
Smart
,
Appl. Phys. Lett.
91
,
121110
(
2007
).
13.
A.
Sedhain
,
J.
Li
,
J. Y.
Lin
, and
H. X.
Jiang
,
Appl. Phys. Lett.
96
,
151902
(
2010
).
14.
C. R.
Moon
,
B. -D.
Choe
,
S. D.
Kwon
,
H. K.
Shin
, and
H.
Lim
,
J. Appl. Phys.
84
,
2673
(
1998
).
15.
C. R.
Moon
and
H. J.
Lim
,
Appl. Phys. Lett.
74
,
2987
(
1999
).
16.
F.
Rossi
,
M.
Pavesi
,
M.
Meneghini
,
G.
Salviati
,
M.
Manfredi
,
G.
Meneghesso
,
A.
Castaldini
,
A.
Cavallini
,
L.
Rigutti
,
U.
Strass
,
U.
Zehnder
, and
E.
Zanoni
,
J. Appl. Phys.
99
,
053104
(
2006
).
17.
L.
Trevisanello
,
M.
Meneghini
,
G.
Mura
,
M.
Vanzi
,
M.
Pavesi
,
G.
Meneghesso
, and
E.
Zanoni
,
IEEE Trans. Device Mater. Reliab.
8
,
304
(
2008
).
18.
C. G.
Van de Walle
,
C.
Stampfl
, and
J.
Neugebauer
,
J. Cryst. Growth
189–190
,
505
(
1998
).
19.
M.
Meneghini
,
G.
Meneghesso
,
N.
Trivellin
,
E.
Zanoni
,
K.
Orita
,
M.
Yuri
, and
D.
Ueda
,
IEEE Electron Device Lett.
29
,
578
(
2008
).
20.
F.
Manyakhin
,
A.
Kovalev
, and
A. E.
Yunovich
,
MRS Internet J. Nitride Semicond. Res.
3
,
53
(
1998
).
You do not currently have access to this content.