A charge trapping memory device using Ti0.2Al0.8Ox film as charge trapping layer and amorphous Al2O3 as the tunneling and blocking layers was fabricated for nonvolatile memory application. TiAl2O5 nanocrystals are precipitated from the phase separation of Ti0.2Al0.8Ox film annealed at 900°C. A memory window of 2.3 V and a stored electron density of 1×1013/cm2 were obtained. Good retention characteristics of the memory device at 80°C were observed due to the deep charge trapping level as identified by the valence band offsets and electron energy loss spectrum measurements.

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