Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates

The dependence between the carrier concentration and electrical mobility has been studied by micro-Raman spectroscopy in n-doped 3C–SiC films grown on (111) and (100) Silicon oriented substrates. Bulk mobility varies between 10 and $510cm2V−1s−1$ for a carrier concentration ranging between $1.6×1016$ and $5.4×1018cm−3$⁠. Local stacking variations observed on the (111) 3C–SiC surface lead to a worse crystal morphology compared to (100) 3C–SiC films resulting in a decrease in the average bulk mobility. Defects are thus accountable for the dependence between mobility and carrier concentration for different 3C–SiC orientations.