High-performance transparent thin-film transistor based on $Y2O3/In2O3$ with low interface traps

High-performance $Y2O3/In2O3$-based transparent thin-film transistors were processed featuring low thermal budget. The device shows a field-effect mobility of $43.5cm2V−1s−1$⁠, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of $108$⁠. These results are attributed to the high dielectric constant of $Y2O3$ and unique electronic structure of $In2O3$⁠. Furthermore, the cubic phases of crystalline $Y2O3$ and $In2O3$ films have the identical crystal structure with a small lattice mismatch, which provides a well-defined dielectric/semiconductor interface for the optimal performance.