The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2×10−5 and 9×10−5 for InSb on GaAs and Si, respectively. The temperature dependence of the Hooge factors is investigated.

Topics
Acoustic noise measurement, Field effect transistors, Photolithography, Ohmic contacts, Sensors, Electronic noise, Epitaxy, Signal processing, Batteries, Semiconductors
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