GaxIn1−xN quantum wells grown by metal organic vapor phase epitaxy on a plane GaN grown on r plane sapphire substrate typically show relatively large surface pits. We show by correlation of low temperature photoluminescence, cathodoluminescence, scanning and transmission electron microscopy that the different semipolar side facets of these pits dominate the overall luminescence signal of such layers.

Topics
Semiconductor device fabrication, Crystallographic defects, Crystal structure, Epitaxy, Luminescence, Scanning electron microscopy, Semiconductor materials, Photoluminescence spectroscopy, Transmission electron microscopy, Quantum wells
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© 2010 American Institute of Physics.
2010
American Institute of Physics
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