The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.
Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
Woong Hee Jeong, Gun Hee Kim, Hyun Soo Shin, Byung Du Ahn, Hyun Jae Kim, Myung-Kwan Ryu, Kyung-Bae Park, Jong-Baek Seon, Sang Yoon Lee; Investigating addition effect of hafnium in InZnO thin film transistors using a solution process. Appl. Phys. Lett. 1 March 2010; 96 (9): 093503. https://doi.org/10.1063/1.3340943
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