The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.
REFERENCES
1.
E. M. C.
Fortunato
, P. M. C.
Barquinha
, A. C. M. B. G.
Pimentel
, A. M. F.
Gonçalves
, A. J. S.
Marques
, R. F. P.
Martins
, and L. M. N.
Pereira
, Appl. Phys. Lett.
85
, 2541
(2004
).2.
K.
Nomura
, H.
Ohta
, A.
Takagi
, T.
Kamiya
, M.
Hiromich
, and H.
Hosono
, Nature (London)
432
, 488
(2004
).3.
D. H.
Cho
, S.
Yang
, C.
Byun
, J.
Shin
, M. K.
Ryu
, S. H. K.
Park
, C. S.
Hwang
, S. M.
Chung
, W. S.
Cheong
, S. M.
Yoon
, and H. Y.
Chu
, Appl. Phys. Lett.
93
, 142111
(2008
).4.
J. S.
Park
, K. S.
Kim
, Y. G.
Park
, Y. G.
Mo
, H. D.
Kim
, and J. K.
Jeong
, Adv. Mater. (Weinheim, Ger.)
21
, 329
(2009
).5.
E. M. C.
Fortunato
, L. M. N.
Pereira
, P. M. C.
Barquinha
, A. M. B.
Rego
, G.
Gonçalves
, A.
Vilà
, J. R.
Morante
, and R. F. P.
Martins
, Appl. Phys. Lett.
92
, 222103
(2008
).6.
H.
Hosono
, J. Non-Cryst. Solids
352
, 851
(2006
).7.
G. H.
Kim
, H. S.
Shin
, B. D.
Ahn
, K. H.
Kim
, W. J.
Park
, and H. J.
Kim
, J. Electrochem. Soc.
156
, H7
(2009
).8.
G. H.
Kim
, B. D.
Ahn
, H. S.
Shin
, W. H.
Jeong
, H. J.
Kim
, and H. J.
Kim
, Appl. Phys. Lett.
94
, 233501
(2009
).9.
L. S.
Prabhumirashi
and J. K.
Khoje
, Thermochim. Acta
383
, 109
(2002
).10.
T.
Kamiya
, K.
Nomura
, and H.
Hosono
, Phys. Status Solidi A
206
, 860
(2009
).11.
B.
Kumar
, H.
Gong
, and R.
Akkipeddi
, J. Appl. Phys.
97
, 063706
(2005
).12.
C. R.
Kagan
and P. W. E.
Andry
, Thin Film Transistors
(Dekker
, New York
, 2003
), p. 85
.13.
J. K.
Jeong
, J. H.
Jeong
, H. W.
Yang
, J. S.
Park
, Y. G.
Mo
, and H. D.
Kim
, Appl. Phys. Lett.
91
, 113505
(2007
).© 2010 American Institute of Physics.
2010
American Institute of Physics
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