We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5–300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.

Topics
Electronic transport, Magnetic ordering, Ohmic contacts, Magnetic fields, Focused ion beam, Electrical resistivity, Electrodeposition, Transmission electron microscopy, Nanocontacts, Nanowires
© 2010 American Institute of Physics.
2010
American Institute of Physics
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