We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5–300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.
Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
N. Marcano, S. Sangiao, M. Plaza, L. Pérez, A. Fernández Pacheco, R. Córdoba, M. C. Sánchez, L. Morellón, M. R. Ibarra, J. M. De Teresa; Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires. Appl. Phys. Lett. 22 February 2010; 96 (8): 082110. https://doi.org/10.1063/1.3328101
Download citation file: