The integration of InGaN quantum dots into GaN-based monolithic microcavities grown by metal-organic vapor-phase epitaxy is demonstrated. Microphotoluminescence spectra reveal distinct spectrally sharp emission lines around 2.73 eV, which can be attributed to the emission of single InGaN quantum dots. The samples are structured into airpost pillar microcavities. The longitudinal and transversal mode spectra of these cavities are in good agreement with theoretical calculations based on a vectorial transfer-matrix method. Quality factors up to Q=280 have been achieved.

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