Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB=13 mA operating at −70 °C⁠. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved.

Topics
Heterostructures, Nanolithography, Quantum wells, Transistors, Inductively coupled plasma, Epitaxy, Fiber optic devices, Laser materials, Optical field, Solid state lasers
© 2010 American Institute of Physics.
2010
American Institute of Physics
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