Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ=959.75nm and threshold current IB=13mA operating at 70°C. For devices with cleaved ends a sidemode suppression ratio >25dB has been achieved.

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