Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength and threshold current operating at . For devices with cleaved ends a sidemode suppression ratio has been achieved.
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Research Article| June 14 2010
Distributed feedback transistor laser
F. Dixon, M. Feng, N. Holonyak; Distributed feedback transistor laser. Appl. Phys. Lett. 14 June 2010; 96 (24): 241103. https://doi.org/10.1063/1.3453656
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