Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on $m$-plane GaN

Nonpolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs) show great promise. However, long wavelength emitters $(λ>500nm)$ have reduced performance in comparison with violet and blue nonpolar emitters. We present results of transmission electron microscopy studies of long wavelength $(11¯00)$ $m$-plane GaN LED series and $m$-plane GaN LDs grown on high quality bulk GaN substrates. $I1$ basal plane stacking faults form in the high In content $InxGa1−xN$ quantum wells $(x∼0.26)$ for thicker wells. The $I1$ faults are bounded by sessile Frank–Shockley partial dislocations that likely limit the radiative efficiency of long wavelength $m$-plane emitters.