Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H–SiC(0001) via the deposition of thin film on top. The large work function difference between EG and facilitates electron transfer from EG to the thin film. This leads to hole accumulation in the EG layer with an areal hole density of about , and places the Fermi level 0.38 eV below the graphene Dirac point.
Surface transfer hole doping of epitaxial graphene using thin film
Zhenyu Chen, Iman Santoso, Rui Wang, Lan Fei Xie, Hong Ying Mao, Han Huang, Yu Zhan Wang, Xing Yu Gao, Zhi Kuan Chen, Dongge Ma, Andrew Thye Shen Wee, Wei Chen; Surface transfer hole doping of epitaxial graphene using thin film. Appl. Phys. Lett. 24 May 2010; 96 (21): 213104. https://doi.org/10.1063/1.3441263
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