Metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with amorphous and gate stacks, grown by molecular beam deposition. As and In oxides were observed at the interface, whereas no oxides were detected on the Si-passivated surface after deposition. Traces of As were found in both gate stacks. Si-passivated MOSFETs, with a drain current of at , , , and inverse subthreshold slope of 98–120 mV/decade, show superior performance with respect to devices without Si interlayer.
Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
C. Marchiori, E. Kiewra, J. Fompeyrine, C. Gerl, C. Rossel, M. Richter, J.-P. Locquet, T. Smets, M. Sousa, C. Andersson, D. J. Webb; Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks. Appl. Phys. Lett. 24 May 2010; 96 (21): 212901. https://doi.org/10.1063/1.3430572
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