The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above that saturates above . The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of . These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge.
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