A universal semiempirical model for the Fowler–Nordheim programming of charge trapping devices

An approximate analytical solution to the dynamics of charge trapping and detrapping by Fowler–Nordheim tunneling is constructed within a simplified model that captures the essential features of the programming characteristics of tunneling devices with the fewest possible parameters. This solution is demonstrated to be an excellent fit for experimental programming characteristics of various tunneling-based nonvolatile memory devices from different laboratories including devices based on traps in silicon nitride, interface traps in silicon dioxide, and silicon nanocrystals.