Electron energy band alignment at the $NiO/SiO2$ interface Available to Purchase

Study of the $NiO/SiO2$ interface band diagram using optical absorption, photoconductivity, and internal photoemission measurements reveals that deposited Ni oxides have a band gap of $3.2±0.1eV$⁠, with the top of the valence band at $5.3±0.1eV$ below the conduction band of $SiO2$ and showing no measurable sensitivity to the oxygen surplus in the layer up to 20%. Annealing in a reducing ambient (forming gas) at $400°C$ results in narrowing of the band gap and an up shift in the occupied electron state edge by $≈1eV$⁠, which is tentatively associated with partial reduction in the NiO layer.