The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.
Effect of contamination on the electronic structure and hole-injection properties of semiconductor interfaces
J. Meyer, A. Shu, M. Kröger, A. Kahn; Effect of contamination on the electronic structure and hole-injection properties of semiconductor interfaces. Appl. Phys. Lett. 29 March 2010; 96 (13): 133308. https://doi.org/10.1063/1.3374333
Download citation file: