We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.
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See supplementary material at http://dx.doi.org/10.1063/1.3259649 for details of experimental method and electrothermal simulation.
© 2010 American Institute of Physics.
2010
American Institute of Physics
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