heteroepitaxy on vicinal Si(1 1 10) substrates leads to the formation of a nanoscale ripple morphology. Atomic force microscopy, and grazing incidence small angle x-ray scattering reveal that these SiGe structures are essentially prisms of triangular cross section bounded by two adjacent {105} facets. Transmission electron microscopy shows the existence of a wetting layer. X-ray diffraction in combination with finite element simulations was performed to extract strain distribution maps. The stabilization of the prism structure is attributed to the strain-dependence of the {105} surface energy.
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For the low Ge concentrations employed here, the building-up of a segregated Ge ML will take a coverage of several ML. We believe that this is the reason for the retarded development of truly {105} faceted prisms, as seen in Fig. 2.
© 2010 American Institute of Physics.
2010
American Institute of Physics
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