(PZT-ZnO) heterostructures were fabricated by using a sol-gel process. Capacitance-voltage measurements performed on a wide temperature range (20–450 K) have revealed the presence of a hysteresis that undergo a change of direction from clockwise at temperatures below 350 K to counter-clockwise at higher temperatures. In the first case, the hysteresis is produced by charge injection, similar to the case of classical metal-oxide-semiconductor capacitors. In the last case, the hysteresis is the fingerprint of polarization reversal, as reported for metal-ferroelectric-semiconductor (MFS) structures based on n-Si. The memory window at 450 K is about 6 V. This result suggests that PZT-ZnO MFS heterostructures can be used for memory devices working at elevated temperatures, in which the ZnO plays the role of the semiconductor.
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4 January 2010
Research Article|
January 04 2010
Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of heterostructures
L. Pintilie;
L. Pintilie
a)
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
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C. Dragoi;
C. Dragoi
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
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R. Radu;
R. Radu
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
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A. Costinoaia;
A. Costinoaia
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
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V. Stancu;
V. Stancu
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
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I. Pintilie
I. Pintilie
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
Search for other works by this author on:
L. Pintilie
a)
C. Dragoi
R. Radu
A. Costinoaia
V. Stancu
I. Pintilie
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
Appl. Phys. Lett. 96, 012903 (2010)
Article history
Received:
November 06 2009
Accepted:
December 14 2009
Citation
L. Pintilie, C. Dragoi, R. Radu, A. Costinoaia, V. Stancu, I. Pintilie; Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of heterostructures. Appl. Phys. Lett. 4 January 2010; 96 (1): 012903. https://doi.org/10.1063/1.3284659
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