(PZT-ZnO) heterostructures were fabricated by using a sol-gel process. Capacitance-voltage measurements performed on a wide temperature range (20–450 K) have revealed the presence of a hysteresis that undergo a change of direction from clockwise at temperatures below 350 K to counter-clockwise at higher temperatures. In the first case, the hysteresis is produced by charge injection, similar to the case of classical metal-oxide-semiconductor capacitors. In the last case, the hysteresis is the fingerprint of polarization reversal, as reported for metal-ferroelectric-semiconductor (MFS) structures based on n-Si. The memory window at 450 K is about 6 V. This result suggests that PZT-ZnO MFS heterostructures can be used for memory devices working at elevated temperatures, in which the ZnO plays the role of the semiconductor.
Skip Nav Destination
,
,
,
,
,
Article navigation
4 January 2010
Research Article|
January 04 2010
Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of heterostructures Available to Purchase
L. Pintilie;
L. Pintilie
a)
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
Search for other works by this author on:
C. Dragoi;
C. Dragoi
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
Search for other works by this author on:
R. Radu;
R. Radu
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
Search for other works by this author on:
A. Costinoaia;
A. Costinoaia
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
Search for other works by this author on:
V. Stancu;
V. Stancu
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
Search for other works by this author on:
I. Pintilie
I. Pintilie
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
Search for other works by this author on:
L. Pintilie
a)
C. Dragoi
R. Radu
A. Costinoaia
V. Stancu
I. Pintilie
National Institute of Materials Physics
, P.O. Box MG-7, Bucharest-Magurele 077125, Romania
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
Appl. Phys. Lett. 96, 012903 (2010)
Article history
Received:
November 06 2009
Accepted:
December 14 2009
Citation
L. Pintilie, C. Dragoi, R. Radu, A. Costinoaia, V. Stancu, I. Pintilie; Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of heterostructures. Appl. Phys. Lett. 4 January 2010; 96 (1): 012903. https://doi.org/10.1063/1.3284659
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Related Content
The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure
J. Appl. Phys. (November 2012)
Orientation-dependent potential barriers in case of epitaxial Pt – BiFeO 3 – SrRuO 3 capacitors
Appl. Phys. Lett. (June 2009)
Electrical properties of LaAlO 3 /Si and Sr 0.8 Bi 2.2 Ta 2 O 9 / LaAlO 3 / Si structures
Appl. Phys. Lett. (August 2001)
The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode
J. Appl. Phys. (September 2012)
Polarization reversal and capacitance-voltage characteristic of epitaxial Pb ( Zr , Ti ) O 3 layers
Appl. Phys. Lett. (May 2005)