We report a photovoltaic effect in ferroelectric thin films. The all-oxide heterostructures with bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages and external quantum efficiencies up to when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the doped indium oxide interface.
Photovoltaic effects in
S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y.-H. Chu, C.-H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager, R. Ramesh; Photovoltaic effects in . Appl. Phys. Lett. 10 August 2009; 95 (6): 062909. https://doi.org/10.1063/1.3204695
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