We report results from optical second harmonic generation studies of boron charge traps near the interface of Si/SiO2. Our data suggest that a static electric field at the interface is formed during the oxide growth process due to the presence of negative boron ions (B) in the silicon substrate and positive boron ions (B+) in the oxide. We demonstrated that the B+ state traps could be filled through the creation of neutral boron states created by internal photoelectron emission. By fitting our data, we found that the effective interface susceptibility |χ(2)| depends on doping concentration.

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