Dopant distribution in gate electrode of $n$- and $p$-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe Available to Purchase

Three dimensional dopant distributions in polycrystalline Si gate of $n$-type $(n-)$ and $p$-type $(p-)$ metal-oxide-semiconductor field effect transistor (MOSFET) structure were investigated by laser-assisted three dimensional atom probe. The remarkable difference in dopant distribution between $n$-MOSFET and $p$-MOSFET was clearly observed. In $n$-MOSFET gate, As and P atoms were segregated at grain boundaries and the interface between gate and gate oxide. No diffusion of As and P atoms into the gate oxide was observed. On the other hand, in $p$-MOSFET, no segregations of B atoms at grain boundaries or the interface were observed, and diffusion of B atoms into the gate oxide was directly observed.