The authors report the results of an experimental investigation of the low-frequency noise in the double-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter αH2×103. The analysis of noise spectral density dependence on the top and bottom gate biases helped to elucidate the noise sources in these devices. The obtained results are important for graphene electronic and sensor applications.

1.
K. S.
Novoselov
,
A. K.
Geim
,
S. V.
Morozov
,
D.
Jiang
,
Y.
Zhang
,
S. V.
Dubonos
,
I. V.
Grigorieva
, and
A. A.
Firsov
,
Science
306
,
666
(
2004
);
[PubMed]
K. S.
Novoselov
,
A. K.
Geim
,
S. V.
Morozov
,
D.
Jiang
,
M. I.
Katsnelson
,
I. V.
Grigorieva
,
S. V.
Dubonos
, and
A. A.
Firsov
,
Nature (London)
438
,
197
(
2005
).
2.
Y. B.
Zhang
,
Y. W.
Tan
,
H. L.
Stormer
, and
P.
Kim
,
Nature (London)
438
,
201
(
2005
);
Y. W.
Tan
,
Y.
Zhang
,
H. L.
Stormer
, and
P.
Kim
,
Eur. Phys. J. Spec. Top.
148
,
15
(
2007
).
3.
S. V.
Morozov
,
K. S.
Novoselov
,
M. I.
Katsnelson
,
F.
Schedin
,
D. C.
Elias
,
J. A.
Jaszczak
, and
A. K.
Geim
,
Phys. Rev. Lett.
100
,
016602
(
2008
).
4.
A. A.
Balandin
,
S.
Ghosh
,
W.
Bao
,
I.
Calizo
,
D.
Teweldebrhan
,
F.
Miao
, and
C. N.
Lau
,
Nano Lett.
8
,
902
(
2008
).
5.
S.
Ghosh
,
I.
Calizo
,
D.
Teweldebrhan
,
E. P.
Pokatilov
,
D. L.
Nika
,
A. A.
Balandin
,
W.
Bao
,
F.
Miao
, and
C. N.
Lau
,
Appl. Phys. Lett.
92
,
151911
(
2008
);
D. L.
Nika
,
E. P.
Pokatilov
,
A. S.
Askerov
, and
A. A.
Balandin
,
Phys. Rev. B
79
,
155413
(
2009
).
6.
Y. M.
Lin
and
P.
Avouris
,
Nano Lett.
8
,
2119
(
2008
).
7.
Q.
Shao
,
G.
Liu
,
D.
Teweldebrhan
,
A. A.
Balandin
,
S.
Rumyantsev
,
M.
Shur
, and
D.
Yan
,
IEEE Electron Device Lett.
30
,
288
(
2009
).
8.
I.
Meric
,
M. Y.
Han
,
A. F.
Young
,
B.
Ozyilmaz
,
P.
Kim
, and
K.
Shepard
,
Nat. Nanotechnol.
3
,
654
(
2008
).
9.
I.
Calizo
,
F.
Miao
,
W.
Bao
,
C. N.
Lau
, and
A. A.
Balandin
,
Appl. Phys. Lett.
91
,
071913
(
2007
);
I.
Calizo
,
A. A.
Balandin
,
W.
Bao
,
F.
Miao
, and
C. N.
Lau
,
Nano Lett.
7
,
2645
(
2007
).
[PubMed]
10.
I.
Calizo
,
W.
Bao
,
F.
Miao
,
C. N.
Lau
, and
A. A.
Balandin
,
Appl. Phys. Lett.
91
,
201904
(
2007
).
11.
D.
Teweldebrhan
and
A. A.
Balandin
,
Appl. Phys. Lett.
94
,
013101
(
2009
).
12.
A. A.
Balandin
,
Noise and Fluctuation Control in Electronic Devices
(
American Scientific
,
Los Angeles
,
2002
).
13.
J. -M.
Peransin
,
P.
Vignaud
,
D.
Rigaud
, and
L. K. J.
Vandamme
,
IEEE Trans. Electron Devices
37
,
2250
(
1990
).
14.
A. A.
Balandin
,
Electron. Lett.
36
,
912
(
2000
).
15.
L.
Reggiani
and
V.
Mitin
,
Riv. Nuovo Cimento
12
,
1
(
1989
);
V.
Mitin
and
C.
van Vliet
,
Phys. Rev. B
41
,
5332
(
1990
).
16.
S.
Bandyopadhyay
,
A.
Svizhenko
,
M. A.
Stroscio
, and
J.
Superlatt
,
Superlattices Microstruct.
27
,
67
(
2000
);
A.
Svizhenko
,
S.
Bandyopadhyay
, and
M. A.
Stroscio
,
J. Phys.: Condens. Matter
11
,
3697
(
1999
).
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