The structural properties of AlGaN/GaN heterostructures grown by metal organic chemical vapor deposition on sapphire substrates with different thicknesses were studied by high-resolution x-ray diffraction. The relation between the deformations and dislocation densities in the layer and substrate was established. The dependence of the system’s curvature on the lattice mismatch, caused by different fractions of nanoblock twists with respect to the c-plane, was determined. A mechanism of elastic strain relaxation was proposed.

Topics
Semiconductors, Electrical properties and parameters, Heterostructures, Crystal lattices, Mechanical stress, Multilayers, High resolution X-ray diffraction, Chemical vapor deposition, Crystal optics, Diffraction optics
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© 2009 American Institute of Physics.
2009
American Institute of Physics
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