We have measured the Hall effect and the magnetoresistance of epitaxial thin films grown on MgO (001) in magnetic fields up to 30 T. Using such high fields, it is possible to magnetically saturate films thicker than 40 nm, providing access to intrinsic conduction properties. We find an effective electron density corresponding to 1 electron per f.u. A smaller value is obtained for thinner films, caused by the increasing density of antiphase boundaries defects. The magnetoresistance is not saturating at 30 T, showing linear dependence at high fields, and peaks at the Verwey transition.
High-field Hall effect and magnetoresistance in epitaxial thin films up to 30 Tesla
A. Fernández-Pacheco, J. Orna, J. M. De Teresa, P. A. Algarabel, L. Morellon, J. A. Pardo, M. R. Ibarra, E. Kampert, U. Zeitler; High-field Hall effect and magnetoresistance in epitaxial thin films up to 30 Tesla. Appl. Phys. Lett. 28 December 2009; 95 (26): 262108. https://doi.org/10.1063/1.3276696
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