We fabricated high-performance single crystal organic field-effect transistors (SC-OFETs) based on dinaphtho[2,3-]thieno-thiophene (DNTT). Among various device geometries and contact types, best performance is obtained for a lamination-type SC-OFET composed of a Cytop-treated gate dielectric and top-contact gold/tetrathiafulvalene-tetracyanoquinodimethane electrodes, which results in hysteresis-free device characteristics with optimum mobility of and an on/off ratio of . The achieved performance is promising for use of the air-stable DNTT in future studies of intrinsic properties of molecular crystals.
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