Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate

We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at $11μm$⁠, on GaAs substrate. Despite a 7.3% lattice mismatch to the substrate, photodiodes passivated with polyimide exhibit an $R0A$ value of $35Ωcm2$ at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of $1.1×1011$ Jones. Although some difference in performances is observed, devices grown on GaAs substrate already attained the background limit performance at 77 K with a 300 K background and a $2π$ field of view.