We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at , on GaAs substrate. Despite a 7.3% lattice mismatch to the substrate, photodiodes passivated with polyimide exhibit an value of at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of Jones. Although some difference in performances is observed, devices grown on GaAs substrate already attained the background limit performance at 77 K with a 300 K background and a field of view.
Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate
S. Abdollahi Pour, B-M. Nguyen, S. Bogdanov, E. K. Huang, M. Razeghi; Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate. Appl. Phys. Lett. 26 October 2009; 95 (17): 173505. https://doi.org/10.1063/1.3254719
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