Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature

Electric-double-layer effect is observed in mesoporous $SiO2$ films deposited by plasma-enhanced chemical vapor deposition at room temperature. Room-temperature processed transparent $InGaZnO4$ thin film transistors (TFTs) gated with such mesoporous $SiO2$ dielectric show an ultralow operating voltage of 1.0 V due to the large electric-double-layer capacitance. The $InGaZnO4$ TFTs exhibit a good performance with a high field-effect mobility of $28.5cm2/Vs$⁠, a low subthreshold swing of 110 mV/decade, and a large on-off ratio of $1.1×106$⁠, respectively. Such ultralow-voltage devices are very promising for low-power transparent macroelectronics on temperature-sensitive substrates.